Filter Results:
- Full text PDF available (2)
Publication Year
1963
2017
- This year (2)
- Last 5 years (2)
- Last 10 years (2)
Publication Type
Co-author
Journals and Conferences
Learn More
- D. A. Slater, P. Enquist, J.A. Hutchby, A. S. Morris, R. J. Trew
- IEEE Electron Device Letters
- 1994
The total emitter to collector delay for a Pnp AlGaAs/GaAs HBT has been reduced to 4.8 ps by employing a thin base (325 /spl Aring/) and collector (2300 /spl Aring/). Simultaneously, a low base sheet… (More)
- D. A. Slater, P. Enquist, +6 authors J. W. Swart
- IEEE Photonics Technology Letters
- 1993
An AlGaAs/GaAs nan heterojunction bipolar transistor (HBT) laser driver circuit and a pseudomorphic InGaAs/GaAs/AlGaAs graded index single-quantum-well (SQW) laser have been laterally integrated to… (More)
- Henry W Jann, Loretta Stein, D. A. Slater
- Veterinary surgery : VS
- 1999
OBJECTIVE
To determine the effects of epidermal growth factor (EGF) or insulin-like growth factor (IGF) on tenoblast migration on absorbable suture material using an in vitro model.
STUDY DESIGN
An… (More)
- P. Enquist, D. A. Slater, J.A. Hutchby, A. S. Morris, R. J. Trew
- IEEE Electron Device Letters
- 1993
A self-aligned HBT mesa fabrication process utilizing selective organometallic vapor phase epitaxy (OMVPE) is reported whereby the extrinsic base has been made considerably thicker than the intrinsic… (More)
- D. A. Slater, G. M. Johnson, L E Lipkin, A. V. Suvorov, J. W. Palmour
- 1996 54th Annual Device Research Conference…
- 1996
Recent improvements in 6H-SiC enhancement-mode NMOS and PMOS device fabrication and performance have resulted in operational circuits up to 500/spl deg/C. These developments have now led to the first… (More)
- D. A. Slater, P. Enquist, F.E. Najjar, M. Y. Chen, J.A. Hutchby
- IEEE Electron Device Letters
- 1990
The monolithic integration of n-p-n and p-n-p heterojunction bipolar transistors (HBTs) through the use of selective metal organic vapor phase epitaxial regrowth is discussed. This was accomplished… (More)
- P. Enquist, D. A. Slater, I.W. Swart
- IEEE Electron Device Letters
- 1992
The monolithic integration of non-self-aligned AlGaAs/GaAs N-p-n and P-n-p HBTs with selective organometallic vapor-phase epitaxy (OMVPE) has been utilized to demonstrate a low-power high-speed… (More)
- George Laws, Helen Ingham, Philip Crone, D. A. Slater
- Journal of medical microbiology
- 1971
- D. A. Slater, P. Enquist, J.A. Hutchby, A. S. Morris, R. J. Trew
- IEEE Electron Device Letters
- 1994
Low emitter resistance is demonstrated for AlGaAs/GaAs heterojunction bipolar transistors using Pd/Ge contacts on a GaAs contact layer. The contact resistivity to 2-10/spl times/10/sup 18/ cm/sup -3/… (More)
Purpose of the Review This review discusses the role that meltwater plays within the Greenland ice sheet system. The ice sheet’s hydrology is important because it affects mass balance through its… (More)