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Abstract Experimental results of the influence of high-density ultra short laser pulses of 60 fs duration ( E = 1.98 eV) on the transient transmission change of thick (0.86, 1.92, 2.32 mm) GaSe… Continue Reading
The electroreflectance and absorption spectra as well as the hydrostatic pressure dependence of the fundamental absorption edge of GeS, GeSe, SnS, and SnSe crystals are investigated in polarized… Continue Reading
The existence of a second-order phase transition in a SnS crystal with an orthorhombic lattice has been demonstrated theoretically. The calculation has been performed in the framework of the density… Continue Reading
The band structures of GeSe, GeS, SnSe and SnS layered semiconductor compounds have been calculated by the EO LCAO method in a single-layer approximation. The Madelung energy of electron in the field… Continue Reading
The reflectance spectra of orthorhombic GeSe crystals are studied in the region 0.5 to 12 eV in polarized light with E ∥ a and E ∥ b at 290 K and a Kramers-Kronig analysis is performed. The… Continue Reading
The photothreshold of a β-GaS layered crystal has been calculated as a function of the thickness of the crystal using the first-principles density functional method. The final thickness of the… Continue Reading
A study was made of the polarization and deformation characteristics of the optical transitions near the fundamental absorption edge of GeS crystals. A specially selected geometry, corresponding to… Continue Reading
The electroreflectance and thermoreflectance spectra of SnSe crystals are investigated in polarized light with E ∥ a and E ∥ b. The direct energy gaps are 1.05 and 1.24 eV for light polarizations E ∥… Continue Reading
The influence of hydrostatic pressure on the electrical conductivity of TlInSe2 and on the optical transmission spectra of TlInSe1.4S0.6 crystals grown by the Bridgman method are reported for the… Continue Reading