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Here, we have demonstrated strong size dependency of quasi-equilibrium and nonequilibrium carrier and photon dynamics in InGaN/GaN single nanowalls using photoluminescence and transient absorption spectroscopy. We demonstrate that two-dimensional carrier confinement, strain relaxation, and modified density of states lead to a reduced Stokes shift, smaller(More)
In this paper, analog/RF performance of symmetric and asymmetric Double Gate MOSFETs (DGMOS), with an optimized underlap length, have been compared and analyzed. High k material (HfO<inf>2</inf>) with SiO<inf>2</inf> padding is used to reduce gate tunneling and scattering of electrons respectively. The on current (I<inf>ON</inf>), transconductance(More)
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