D Radisic

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  • I P Radu, O Zografos, A Vaysset, F Ciubotaru, J Yan, J Swerts +16 others
  • 2016
—In this paper we present an overview of two types of majority gate devices based on spintronic phenomena. We compare the spin torque majority gate and the spin wave majority gate and describe work on these devices. We discuss operating conditions for the two device concepts, circuit implication and how these reflect on materials choices for device(More)
An excess electron can be bound to a molecule in a very diffuse orbital as a result of the long-range contributions of the molecular electrostatic field. Following a systematic search, we report experimental evidence that quadrupole binding occurs for the trans-succinonitrile molecule (EA=20+/-2 meV), while the gauche-succinonitrile conformer supports a(More)
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