D.R. Burke

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This paper presents a novel approach to the physical modelling of Si based sub-micron MOSFETs. The model is based on a set of simplified transport equations for the conducting channel in a MOSFET. These equations incorporate non-quasi-static (NQS) effects due to the inclusion of time derivatives, and describe the semiconductor dynamics in terms of coupled(More)
A new compact DC and large-signal physics-based non-quasi-static (NQS) MOSFET model is proposed, suitable for partially-depleted body-tied silicon-on-insulator (SOI) MOSFETs. The developed four-terminal nonlinear model is comprised solely of fully-continuous explicit expressions that allow for quick simulation times and accurate intermodulation distortion(More)
The static and large-signal behaviour of a new model for a submicron partially-depleted (PD) body-tied (BT) silicon-on-insulator (SOI) MOSFET was recently shown to give excellent agreement with measurements. Here, we complete the model validation with a detailed study of its small-signal capabilities up to a frequency of 50 GHz. Additionally, a new direct(More)
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