D Pribat

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In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition ͑PECVD͒ of carbon nanotubes. By patterning the nickel(More)
We compare the field emission characteristics of dense (10 9 nanofibers/cm 2), sparse (10 7 nanofibers/cm 2), and patterned arrays (10 6 nanofibers/cm 2) of vertically aligned carbon nanofibers on silicon substrates. The carbon nanofibers were prepared using plasma-enhanced chemical vapor deposition of acetylene and ammonia gases in the presence of a nickel(More)
  • J f Dayen, T L Wade, G Rizza, D S Golubev, C s Cojocaru, D Pribat +3 others
  • 2013
A comparative study of the low temperature conductivity of an ensemble of multiwall carbon nanotubes and semiconductor nanowires is presented. The quasi one‐dimensional samples are made in nanoporous templates by electrodeposition and CVD growth. Three different structures are studied in parallel: multiwall carbon nanotubes, tellurium nanowires, and silicon(More)
Porous alumina templates have been fabricated by applying an exponential voltage decrease at the end of the anodization process. The time constant η of the exponential voltage function has been used to control the average thickness and the thickness distribution of the barrier layer at the bottom of the pores of the alumina structure. Depending on the η(More)
Carbon nanotubes and semiconductor nanowires have been thoroughly studied for the future replacement of silicon-based complementary metal oxide semiconductor (CMOS) devices and circuits. However, the organisation of these nanomaterials in dense transistor arrays, where each device is capable of delivering drive currents comparable with those of their(More)
Confined lateral alumina templates are fabricated with different pore sizes by changing the acid electrolyte and the anodization voltage. The control of the number of pore rows down to one dimension is also achieved, by controlling the thickness of the starting aluminum film as well as the anodization voltage. We observe that the mechanism of pore formation(More)
  • S F Gong, H T G Hentzell, A E Robertsson, L Hultman, S.-E Homstrom, G Radnoczi +93 others
  • 2005
71 hydrogen plasma treatment 3.6 SUMMARY Room temperature exposure to a RF hydrogen plasma can dramatically reduce the thermal budget for the crystallization of PECVD a-Si:H films. The hydrogen plasma treatment changes the microstructure of the q-Si:Hat the surface, and depletes hydrogen from the surface of the film. The plasma treatment creates seed nuclei(More)
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