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AlGaN/GaN HEMTs have been widely used in RF power circuits such as high power amplifiers [1]. This is mainly due to the capability to handle large power. Besides this main advantage, this technology demonstrates good performances in terms of noise, linearity, and robustness. This paper presents the design, and measurement results of different mixers(More)
This paper presents results of a Ka-band VSAT Ground Terminal MMIC chipset developed in a cost reduction context. The first one, a Low Level Multifunction designed for up-conversion with high gain driver, exhibits a 17dB conversion gain with an associated P1dB output power close to +18dBm. The second one, a High Power Amplifier with embedded power(More)
In this paper, the design and measurements of a low-loss radiofrequency (RF) microelectromechanical (MEMS) 2-Bit Ka-Band monolithic Phase-Shifter for high-power application is presented. These micro-strip circuits are fabricated on a 0.254 mm-thick Sapphire substrate and are based on a reflection-type topology which uses 3-dB branch line couplers. The(More)
This paper deals with the design, manufacture and test of a high efficiency power amplifier for L-band space borne applications. The circuit operates with a single 36 mm gate periphery GaN HEMT power bar die allowing both improved integration and performance as compared with standard HPA design in a similar RF power range. A huge effort dedicated to the(More)
Results of a Ku band High Power Amplifier (HPA) module demonstrator based on solid state devices for active antenna application is described in this paper. The HPA module based on four combined GaAs monolithic microwave integrated circuits (MMIC's) produces an estimated output power of 39.2 dBm and has shown an estimated Power Added Efficiency (PAE) of(More)
In this paper, we present the design of a MMIC circuit, which contains two switched VCOs based on the Clapp topology using a UMS GaInP/GaAs HBT technology. This achieves more than 30% of tuning range around 3.2 GHz, a phase noise of −95 dBc/Hz at 100 KHz offset frequency from the carrier and a power consumption of 150 mW. A DC switch based on HBT was(More)
In this paper, two wideband double and triple balanced mixers integrated in GaAs technology are presented. Diodes quads in such structures are driven by low loss baluns. These baluns are designed thanks to double-inductances connected as Marchand coupler. In the mid-band, a conversion loss of 10dB has been measured for the two mixers. The double and triple(More)
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