D. Kitayama

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In this paper, we report our approaches in realizing EOT of 0.5nm and below with rare earth La<inf>2</inf>O<inf>3</inf> high-k gate dielectric. An EOT of 0.43 nm was obtained from a TiN/W/La<inf>2</inf>O<inf>3</inf>(3nm)/n-Si capacitor by optimizing the thickness W layer. Our results show that a proper gate electrode is one of the most important factors for(More)
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