D. K. Sadana

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The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of the graphene cannot be controlled. Graphene grown on SiC(0001) via the decomposition of the surface has a single orientation, but its thickness cannot be easily limited to one(More)
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Monolithic integration of III-V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III-V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III-V plasmonic light sources can be directly grown on Si(More)
There are numerous studies on the growth of planar films on sp(2)-bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline(More)
A fracture-based layer transfer technique referred to as controlled spalling was used to separate a conventional InGaN/GaN multiple quantum well light-emitting diode (LED) structure from a 50 mm sapphire wafer enabling the formation of vertical spalled LEDs (SLEDs). A 25-m-thick tensile Ni layer was electrodeposited on the surface of the wafer, followed by(More)
This review focuses on material challenges associated with III-V co-integration with Si for future CMOS. There is a huge volume of literature on this topic as implementation of III-V monolithic integration with Si has been the holy grail for last four decades; targeting a wide range of applications including RF devices, LEDs, lasers, photo-detectors and the(More)
Thin, lightweight and flexible electronics are being regarded as an important evolutionary step in the development of novel technological products. Interestingly, this trend has emerged in a wide range of industries; from microelectronics to photovoltaics and even solid state lighting. Historically, most attempts to enable flexibility have focused on the(More)
— In this work, we demonstrate a new scheme for realizing flexible double-junction InGaP/(In)GaAs tandem solar cells with very high specific power of ~2000W/kg at one sun intensity. The controlled spalling technique is employed because of its simplicity to separate the solar cell structure from the growth substrate. Furthermore, the entirety of the elements(More)
This paper systematically studies the effect of the a-SiGe:H band gap on the solar cell performance. We found that the Ge incorporation efficiency drops with increasing the GeH<inf>4</inf>/SiH<inf>4</inf> gas ratio. The Ge incorporation efficiency is the ratio between the Ge at. % to the GeH<inf>4</inf>/SiH<inf>4</inf> gas ratio and it starts from 4 at 5 %(More)
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