D. K. Sadana

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The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of the graphene cannot be controlled. Graphene grown on SiC(0001) via the decomposition of the surface has a single orientation, but its thickness cannot be easily limited to one(More)
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Monolithic integration of III-V semiconductor lasers with Si circuits can reduce cost and enhance performance for optical interconnects dramatically. We propose and investigate plasmonic III-V nanolasers as monolithically integrated light source on Si chips due to many advantages. First, these III-V plasmonic light sources can be directly grown on Si(More)
There are numerous studies on the growth of planar films on sp(2)-bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline(More)
In this letter, we demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the as-grown solar cell structure from the host Ge wafer followed by its transfer to an arbitrary Si support substrate. The(More)
Flexible solar cells are envisioned to open up a myriad of possibilities for enabling new applications in consumer electronics and space satellites. [ 1–3 ] Organic and amorphous semiconductors hold a great promise for realizing bendable and lightweight solar cells, largely due to their fairly strong light absorption properties, process temperature(More)
A fracture-based layer transfer technique referred to as controlled spalling was used to separate a conventional InGaN/GaN multiple quantum well light-emitting diode (LED) structure from a 50 mm sapphire wafer enabling the formation of vertical spalled LEDs (SLEDs). A 25-m-thick tensile Ni layer was electrodeposited on the surface of the wafer, followed by(More)
Resonant tunneling diode (RTD) is an electronic device embodying a unique quantum-interference phenomenon: negative differential resistance (NDR). Compared to other negative resistance devices such as (Esaki) tunnel and transferred-electron devices, RTDs operate much faster and at higher temperatures. III-nitride materials, composed of AlGaInN alloys, have(More)
In this work, we show that a 2D cleave layer (such as epitaxial graphene on SiC) can be used for precise release of GaN-based light emitting diodes (LEDs) from the LED-substrate interface. We demonstrate the thinnest GaN-based blue LED and report on the initial electrical and optical characteristics. Our LED device employs vertical architecture: promising(More)