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We describe a quasi-planar HBT process using a patterned implanted subcollector with a regrown MBE device layer. Using this process we have demonstrated discrete SHBT with f/sub t/ > 250 GHz and DHBT with f/sub t/ > 230 GHz. The process eliminates the need to trade base resistance for extrinsic base/collector capacitance. The low proportion of extrinsic(More)
Operation of a static, current mode logic (CML) frequency divider to clock frequencies exceeding 150GHz is reported. The divide-by-8 circuit described here has been realized in a highly scaled 0.4/spl mu/m InP/InGaAs/InP DHBT technology, dissipates only 45mW per latch, and achieves this using purely resistive loads. Thermal limitations in device performance(More)
Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain- bandwidth product of 40-130 GHz and low frequency gain >45 dB. The use of InP DHBTs supports a 6.9 V differential output(More)
S-parameter measurements performed on 400GHz InP DHBTs, with 250nm and 400nm wide emitters, show that an 8-10% increase in peak f/sub T/ can be achieved when the ambient temperature is reduced from +25/spl deg/C to -50/spl deg/C. This strong temperature dependence of device performance indicates that thermal modeling plays a critical role in device and(More)
We present the results of an InP HBT device development process. We have developed a new HBT device fabrication approach that represents a major departure from traditional compound semiconductor manufacturing techniques. The new generation of deep submicron InP-based HBTs presented here uses an ion implanted subcollector and offers significantly improved(More)
Recent developments in highly scaled SiGe and InP IC technologies have yielded devices with f/sub T/ and f/sub max/ figures-of-merit well beyond 300GHz, bringing with them the potential to operate circuits of considerable complexity at clock rates exceeding 100GHz. An initial emphasis upon digital applications helps to put the technologies on a roadmap(More)
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