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Ge growth on high-indexed Si (1110) is shown to result in the spontaneous formation of a perfectly {105} faceted one-dimensional nanoripple structure. This evolution differs from the usual Stranski-Krastanow growth mode because from initial ripple seeds a faceted Ge layer is formed that extends down to the heterointerface. Ab initio calculations reveal that(More)
SiGe heteroepitaxy on vicinal Si (1 1 10) is studied as a model system for one-dimensional (1D) to three-dimensional growth mode transitions. By in situ scanning tunneling microscopy it is shown that the 1D-3D transition proceeds smoothly from perfectly facetted 1D nanoripples to coarsened superripples, tadpoles, asymmetric domes, and barns without(More)
Samples originating from an EU sponsored intercomparison exercise were analysed by gamma ray spectrometry (a thorium solution sample, a zircon sand sample and a thorium ore sample). An alpha track method was also used to analyse the solution sample. The detection efficiency calibration for the gamma ray spectrometry measurements on the solid samples was(More)
We report on two ultrastable lasers each stabilized to independent silicon Fabry-Pérot cavities operated at 124 K. The fractional frequency instability of each laser is completely determined by the fundamental thermal Brownian noise of the mirror coatings with a flicker noise floor of 4×10^{-17} for integration times between 0.8 s and a few tens of seconds.(More)
Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the evolution of RHEED patterns reveals a rapid change of the stripe morphology from a multifaceted "U" to a single-faceted "V" geometry with {119}(More)
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