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Flip chip bonding requires a device to be flipped and attached to the bond pads or traces on the substrate. For lower pitch devices with large bond pads, this was accomplished using gravity reflow followed by capillary underfill (CUF). For fine-pitch devices mounted close to each other on a substrate, CUF has not been as effective as the use of a(More)
Reactive ion etch (RIE) of p-SiLK, a spin-on polymer based ultra low-k (ULK) material with a k value of /spl sim/2.2 was characterized and its influence on electrical yield and dielectric breakdown is presented here. Material characterization was done using blanket films after curing and the effect of exposure to different conventional plasma etch gas(More)
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