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This paper considers an approach to nonlinear model-order reduction for RF/microwave integrated circuits (ICs) from the perspective of "black-box" behavioral modeling. We present a systematic methodology for creating behavioral models using techniques developed from concepts in system identification, nonlinear dynamics, computational geometry, and(More)
We present an optimal experiment design methodology and a superior and fully automated model generation procedure for identifying a class of broad-band multiharmonic behavioral models in the frequency domain. The approach reduces the number of nonlinear measurements needed, minimizes the time to generate the data from simulations, reduces the time to(More)
This paper reviews and contrasts two complementary device modeling approaches based on data readily obtainable from a nonlinear vector network analyzer (NVNA) [1]. The first approach extends the application of waveform data to improve the characterization, parameter extraction, and validation methodologies for “compact” transistor models. NVNA(More)
Power amplifier (PA) behavior is inextricably linked to the characteristics of the transistors underlying the PA design. All transistors exhibit some degree of memory effects, which must therefore be taken into account in the modeling and design of these PAs. In this paper, we will present new trends for the characterization, device modeling, and behavioral(More)
X-parameters, also referred to as the parameters of the Poly-Harmonic Distortion (PHD) nonlinear behavioral model, have been introduced as the natural extension of S-parameters to nonlinear devices under large-signal drive [1]-[3]. This paper describes a new approach to X-parameter characterization and nonlinear simulation - including large-signal(More)
This paper presents a complete Doherty power amplifier design that has been developed entirely inside the circuit simulator, but using nonlinear vector network analyzer data and measured X-parameter models. A high-power nonlinear measurement setup with active load-pull capabilities is presented and used to extract X-parameters of a commercially available(More)
This work presents an overview of several key technical considerations required for state-of-the-art nonlinear circuit simulation models of III-V HBT and FET devices. A unified large-signal modeling framework that incorporates the voltage and current dependence of nonlinear transit time and depletion capacitances in III-V HBTs, as well as the multiple(More)
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