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We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number(More)
This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d *(More)
I meant no harm, I promise. In the last issue of Radiations, I wanted to refer to the author of our cover story a second time; I reflexively chose to use " Ms. Tannenwald, " feeling rather virtuous that I didn't blurt out " Miss " or " Mrs. " What does it say about me that I didn't stop when selecting an appropriate title to consider that she is an(More)
In-plane directional control of surface chemistry during interface formation can lead to new opportunities regarding device structures and applications. Control of this type requires techniques that can probe and hence provide feedback on the chemical reactivity of bonds not only in specific directions but also in real time. Here, we demonstrate both(More)
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