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The defects in the SIO<sub>2</sub> interfacial layer (IL) in SiO<sub>2</sub>-HfO<sub>2</sub> gate stacks are studied using charge pumping (CP). To that aim, conventional CP curves and interface trap density vs. energy, D<sub>it</sub>(E), profiles measured on these devices are compared with those recorded from state of the art (S-A) MOSFETs. By doing so,(More)
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