D. Acharyya

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Article history: Received 17 May 2013 Received in revised form 19 November 2013 Accepted 27 November 2013 Available online 4 January 2014 A Resistive Random Access Memory (RRAM), where the memory performance principally originated from ‘resistive’ change rather than ‘capacitive’ one (the case with conventional CMOS memory devices), has attracted researchers(More)
Statistical analysis and optimization is critical for robust nanoscale circuit design. To accurately perform such analysis, primary process variation sources must be identified and their distributions must be well characterized. We present a rigorous method to extract process variations from in-situ IV measurements. Transistor statistics are collected from(More)
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