Cyril Buttay

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— This paper presents a comparative study of three Predictive Current Control (PCC) schemes for Permanent Magnet Synchronous Machines (PMSM) drives. The first control scheme predicts the future evolution of the currents for each possible configuration of the inverter legs. Then the switching state which minimizes a given cost function is selected and(More)
Silver sintering die attach is a promising technology for high temperature power electronics packaging. In this paper, we evaluate its performances in terms of thermal resistance and high temperature stability. The thermal resistance is measured on test vehicles assembled under different conditions, using silver pastes from NBETech and Heraeus, with(More)
Normally-on Silicon Carbide (SiC) JFETs are powerful power switches that allow improvement of the efficiency and high temperature operation of Voltage Fed Inverter (VFI). Moreover, the need for heavy and costly cooling system can be radically decreased due to the high thermal conductivity that exhibits the SiC material compared to Si counterpart. However(More)
This paper addresses the behavior of low voltage MOSFETs under breakdown avalanche operation. The phenomena leading to avalanche operation of the MOSFET transistors in automotive applications are first presented. Then, after a brief description of the model and of the experimental identification of its parameters, electrothermal simulations are performed. A(More)
Silver sintering is a promising alternative to high melting point (HMP) solders which contain lead. Indeed, it offers better thermal and electrical properties, and can operate at higher temperature. Currently, several implementations of this technique are available, based on various silver particles sizes and sintering additives. This paper presents a(More)
SiC devices have been substituted to Si dies for high temperature applications. However, classical packagings are not adapted for harsh environment and new solutions for back-side die attach must be envisaged. In this paper, theoretical basis and results for nano-silver sintering Transient Liquid Phase Bonding will be presented.
Silicon Carbide devices are in theory able to operate at very high temperatures, but many mechanisms actually lower the limit. In this paper we describe two of these mechanisms: the thermal run-away, and the ageing of the device. Ageing effects are assessed through two different set-ups: SiC diodes in plastic packages are stored for long periods (up to 2000(More)
The classical wire bonding has several drawbacks that make 3D structures a desirable technology for a high performance power module. An interconnection solution for the power semiconductor dies is presented here: it is based on copper micro-posts that are electroplated on top of the die. The die with its micro-posts is then assembled between two Direct(More)