Cyril Buttay

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— This paper presents a comparative study of three Predictive Current Control (PCC) schemes for Permanent Magnet Synchronous Machines (PMSM) drives. The first control scheme predicts the future evolution of the currents for each possible configuration of the inverter legs. Then the switching state which minimizes a given cost function is selected and(More)
Silver sintering die attach is a promising technology for high temperature power electronics packaging. In this paper, we evaluate its performances in terms of thermal resistance and high temperature stability. The thermal resistance is measured on test vehicles assembled under different conditions, using silver pastes from NBETech and Heraeus, with(More)
Normally-on Silicon Carbide (SiC) JFETs are powerful power switches that allow improvement of the efficiency and high temperature operation of Voltage Fed Inverter (VFI). Moreover, the need for heavy and costly cooling system can be radically decreased due to the high thermal conductivity that exhibits the SiC material compared to Si counterpart. However(More)
This paper addresses the behavior of low voltage MOSFETs under breakdown avalanche operation. The phenomena leading to avalanche operation of the MOSFET transistors in automotive applications are first presented. Then, after a brief description of the model and of the experimental identification of its parameters, electrothermal simulations are performed. A(More)
Silver sintering is a promising alternative to high melting point (HMP) solders which contain lead. Indeed, it offers better thermal and electrical properties, and can operate at higher temperature. Currently, several implementations of this technique are available, based on various silver particles sizes and sintering additives. This paper presents a(More)
One of the key advantage of SiC power devices over their Si counterparts is their ability to operate at higher temperature (in theory up to 1000 K for a 1000 V-rated SiC device as compared to less that 500 K for a comparable Si device [1]). Practical tests have already demonstrated operation at elevated temperature. For example, in [2], SiC JFET and diode(More)
SiC devices have been substituted to Si dies for high temperature applications. However, classical packagings are not adapted for harsh environment and new solutions for back-side die attach must be envisaged. In this paper, theoretical basis and results for nano-silver sintering Transient Liquid Phase Bonding will be presented.
Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature(More)