Cynthia Kirchner

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The high reactivity of the free silicon surface and its consequence: the "omnipresent" native silicon oxide hinder the interface engineering in many processing steps of IC technology on the atomic level. Methods known to eliminate the native oxide need in most cases vacuum processing. They frequently deteriorate the atomic flatness of the silicon. Hydrogen(More)
Selective rapid thermal oxidation (RTO) is needed to oxidize a tungsten (W) / tungsten nitride (WN) / poly silicon gate structure after gate patterning. Si/SiO<sub>2</sub> and tungsten can coexist in a gas ambient of up to approximately 20% H<sub>2</sub>O in H<sub>2</sub> at temperatures which are suitable for RTO (800degC -1100degC) [1]. We present the(More)
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