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In this paper we highlight the important role of full-scale 3D Ensemble Monte Carlo (EMC) transport simulations in the performance analysis of contemporary and future decananometer MOSFETs. Considering both electron and hole transport in alternative device structures and materials we demonstrate that conventional drift diffusion (DD) simulations using(More)
—For the scaling of ultrathin body double gate (UTB DG) MOSFETs to channel lengths below 10 nm, a silicon body thickness of less than 5 nm is required. At these dimensions the influence of atomic scale roughness at the interface between the silicon body and the gate dielectric becomes significant, producing appreciable body thickness fluctuations. These(More)
Monte Carlo remains an effective simulations methodology for the study of MOSFET devices well into the decananometre regime as it captures non-equilibrium and quasi-ballistic transport. The inclusion of quantum corrections further extends the usefulness of this technique without adding significant computational cost. In this paper we examine the impact of(More)
In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consistent framework that couples a MSB-EMC transport engine for a 1D electron gas with a(More)
A methodology to include quantum corrections in 3D Monte Carlo simulations is presented, based on the Density Gradient formalism. Three flavours are introduced, with increasing degrees of self-consistency between the current, field and quantum correction and compared in terms of accuracy and impact on the current voltage characteristics.
We study the technology and process choices, namely Si vs. Ge PMOS FinFETs, and channel-doping approach for threshold voltage (V<sub>TH</sub>) control of FinFETs, at advanced technology nodes by using full-band ensemble Monte Carlo (EMC) and calibrated `atomistic' Drift-Diffusion (DD) simulations. The simulation results indicate that Ge is not an ideal(More)
In this paper transport in the inversion layer of a Ge channel pMOS structure is studied using a full 6-band k&#x00B7;p Monte Carlo simulator. In addition to the usual bulk-scattering mechanisms, which are calibrated and validated against the available experimental data, effects of the gate stack are included via SO phonons and surface roughness scattering.(More)
The need for an accurate simulation of non-planar devices such as FinFETs and nanowire based FETs, including a full quantun treatment of transversal two-dimensional confinement, motivated the development of a three-dimensional Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator. Here we describe the last improvements of such simulator including better(More)
In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simulation module to study electron transport in nanowire structures. The 1DMSMC simulation module is integrated into the GSS TCAD simulator GARAND coupling a MC electron trajectory simulation with a 3D Poisson-2D Schro&#x0308;dinger solver, and accounting for the(More)
From 3D Monte Carlo and drift diffusion TCAD simulations to compact models, we develop an early PDK of 10nm CMOS node technology employing co-integration of 15nm physical channel length III-V and Ge transistors. By taking into account the statistical variability, reliable predictions of the impact of variability on circuit performance and yield can be(More)