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  • Y S Chauhan, C Anghel, F Krummenacher, A M Ionescu, M Declercq, R Gillon +2 others
  • 2006
— We propose a new highly scalable general high voltage MOSFET model for circuit simulation. A new general drift resistance model for the drift part is proposed while intrinsic MOS channel is modeled using low voltage EKV MOS model. The proposed general model is highly scalable for major physical and electrical parameters. It is shown that the model(More)
"Normally off, instantly on" applications are becoming common in our environment. They range from healthcare to video surveillance. As the number of applications and their associated performance requirements grow rapidly, more and more powerful, flexible and power efficient computing units are necessary. In such a context, Field Programmable Gate Arrays(More)