Corrado Spinella

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The usage of semiconductor nanostructures is highly promising for boosting the energy conversion efficiency in photovoltaics technology, but still some of the underlying mechanisms are not well understood at the nanoscale length. Ge quantum dots (QDs) should have a larger absorption and a more efficient quantum confinement effect than Si ones, thus they are(More)
INTRODUCTION Scientific report According to project objectives, namely to grow and to evaluate the structural, electrical and optical properties of nanostructures in the Si-Ge-C system and to gain insight into fundamental physics of these structures, and to improve the luminescence efficiency of these structures, and according to the work plan for the(More)
We propose an up-scalable, reliable, contamination-free, rod-like TiO2 material grown by a new method based on sputtering deposition concepts which offers a multi-scale porosity, namely: an intra-rods nano-porosity (1-5 nm) arising from the Thornton's conditions and an extra-rods meso-porosity (10-50 nm) originating from the spatial separation of the(More)
! 401-­‐863-­‐2637 ·" Domenico_Pacifici@brown.edu RESEARCH INTERESTS Domenico Pacifici is currently leading research projects involving the use of photons and surface plasmons in nanostructured materials for information, sensing and energy-­‐harvesting applications. BLOCKIN concentrators BLOCKIN BLOCKIN for broad-­‐band enhanced absorption in ultra-­‐thin(More)
In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO2 layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in(More)
The effect of O implantation in crystalline Ge on the density of native point defects has been investigated through transmission electron microscopy and B diffusion experiments. Annealing at 650 • C following O implants produces a band of defects (∼5–10 nm), compatible with GeO 2 nanoclusters (NCs). A clear shape transformation from elongated to spherical(More)
This work reports the study concerning the influence of the preparation conditions on the structure of silicon rich oxide (SRO) deposited by PECVD method by which the structural properties of the film are strictly related. In particular we investigated the role of reactant gases N 2 O and SiH 4 on the total Si concentration, Si excess concentration, Si(More)
The formation of pseudoepitaxial transrotational structures has been observed during the early stage of the reaction of thin Ni layers on [001] Si substrates. During the reaction, large Ni(2)Si domains, characterized by single bending contours, establish a close relationship with the silicon lattice. The silicide domain consists of a core region, along the(More)
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