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Significant new mechanical and electronic phenomena can arise in single-crystal semiconductors when their thickness reaches nanometer dimensions, where the two surfaces of the crystal are physically close enough to each other that what happens at one surface influences what happens at the other. We show experimentally that, in silicon nanomembranes,(More)
Epitaxial growth of self-assembled quantum dots (QDs) on single-crystal nanomembranes yields organized arrays of QDs via a growth mode mediated by QD-induced strains in the membrane. A crucial aspect of this effect arises because epitaxial growth on thin Si sheets and nanostructures derived from them can occur simultaneously on two surfaces separated only(More)
The flexibility of single-crystal Si nanomembranes allows strain to be applied elastically without introducing dislocations in the fabrication process, resulting in uniform strain. It is also relatively easier to apply different types and orientations of strain to Si using elastic-strain sharing than by the traditional graded-strained-layer approach. We use(More)
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