Chung-Hsun Lin

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—The need for meeting the expectations of continuing the enhancement of CMOS performance and density has inspired the introduction of new materials into the classical single-gate bulk MOSFET and the development of nonclassical multigate transistors at an accelerated rate. There is a strong need to understand and model the associated new physics and(More)
(a) (b) Fig. 1 Illustration of a (a) double-gate FinFET with a oxide hard mask on top of the fin and a (b) tri-gate FinFET without a hard mask. Abstract— A study of designing FinFET-based SRAM cells using a compact model is reported. Parameters for a multi-gate FET compact model, BSIM-MG are extracted from fabricated n-type and p-type SOI FinFETs. Local(More)
  • Mohan V Dunga, Chung-Hsun Lin, Darsen D Lu, Weize Xiong, C R Cleavelin, P Patruno +4 others
  • 2007
A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A(More)
Introduction In the sub-45nm CMOS technology regime, the impact of device variations on circuit functionality becomes critial. The two main approaches for simulating the impact of variation in a design are (i) worst-and best-case corner method, and (ii) Monte Carlo (MC) SPICE simulation [1]. The corner approach usually gives overly pessimistic or optimistic(More)
Many methods have been developed for reverse engineering gene networks from time series expression data. However, when the number of genes and the complexity of regulation increase, it becomes increasingly difficult to infer gene networks. To tackle this scalability problem, this study presents an approach with two phases: gene clustering and network(More)
  • Jin He, Xuemei Xi, Chung-Hsun Lin, Mansun Chan, Ali Niknejad, Chenming Hu
  • 2004
A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poisson's equation to solve for electron concentration directly rather than relying on the surface potential alone. Therefore, carrier distribution in the channel away from the surface is also(More)
This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition,(More)