Chung-Hsun Lin

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This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition,(More)
—The need for meeting the expectations of continuing the enhancement of CMOS performance and density has inspired the introduction of new materials into the classical single-gate bulk MOSFET and the development of nonclassical multigate transistors at an accelerated rate. There is a strong need to understand and model the associated new physics and(More)
(a) (b) Fig. 1 Illustration of a (a) double-gate FinFET with a oxide hard mask on top of the fin and a (b) tri-gate FinFET without a hard mask. Abstract— A study of designing FinFET-based SRAM cells using a compact model is reported. Parameters for a multi-gate FET compact model, BSIM-MG are extracted from fabricated n-type and p-type SOI FinFETs. Local(More)
A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A(More)
Many methods have been developed for reverse engineering gene networks from time series expression data. However, when the number of genes and the complexity of regulation increase, it becomes increasingly difficult to infer gene networks. To tackle this scalability problem, this study presents an approach with two phases: gene clustering and network(More)
A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poisson's equation to solve for electron concentration directly rather than relying on the surface potential alone. Therefore, carrier distribution in the channel away from the surface is also(More)
A bias-dependent QM correction for surface potential calculation is derived for DG MOSFETs. The QM-corrected surface potential agrees with the 2D simulation results well. This indicates that both V<sub>th </sub> shift in the subthreshold and strong inversion regions and gate capacitance degradation in the strong inversion region due to QM are predicted(More)
We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (plusmnsigma and plusmn2sigma) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain(More)