Chung-Chih Hsiao

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First, we create a MOS-NDR (negative differential resistance) cell and then put two MOS-NDR cells in cascode (totem-pole) structure. With MOBILE (monostable-bistable transition logic element) theorem we can built a MOS-NDR inverter by placing a NMOS in parallel with the lower part of the cascode structure. The MOS-NDR inverter cascades two Common-Source(More)
A voltage-controlled ring oscillator (VCO) based on novel MOS-NDR circuit is described. This MOS-NDR circuit is made of metal-oxide-semiconductor emiconductor ield-effect-transistor ( MOS) devices that can exhibit the negative differential resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The VCO is constructed by(More)
This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably(More)
This paper describes the design of a four-valued memory cell based on a three-peak MOS-NDR circuit. We connect three MOS-NDR devices in parallel that can create a three-peak current-voltage curve by suitably arranging the parameters. Due to its folding I-V characteristics, multiple-peak NDR device is a very promising device for multiple-valued logic(More)
We propose a new MOS-NDR device that is composed of the metal-oxide-semiconductor field-effect- transistor (MOS) devices. This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage characteristics by suitably modulating the MOS parameters. We design a logic circuit which can operate the inverter, NOR, and(More)
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