Chung-Chieh Yang

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InGaN-based light-emitting diodes (LEDs) with nanoporous microhole array (NMA) structures were fabricated through photoelectrochemical wet oxidation and oxide-removing processes. The average size of the nanoporous structure at the microhole regions was measured at 60-80 nm. Forward voltages were measured at 3.47 and 3.68 V for a standard LED (ST-LED) and an(More)
A high-efficiency InGaN light-emitting diode (LED) structure was grown on a silane (SiH<sub>4</sub>)-treated undoped-GaN layer with a thin in situ grown SiN<sub>&#x221E;</sub> layer and a 3-D island structure. A lateral one-step epitaxial growth process was performed on the SiH<sub>4</sub>-treated GaN island structure to form a series-of-embedded-air-void(More)
InGaN-based light-emitting diodes (LEDs) with a lateral-etched (LE) undercut structure were fabricated through a photoelectrochemical-etching process. The LE-LED was fabricated with an undercut structure, where the InGaN layer acted as a sacrificial layer without reducing the effective emission area. The electroluminescence (EL) spectrum of the LE-LED had a(More)
High-oriented Li-Al layered double hydroxide (LDH) films were grown on an InGaN light-emitting diode (LED) structures by immersing in an aqueous alkaline Al(3+)- and Li+-containing solution. The stand upward and adjacent Li-Al LDH platelet structure was formed on the LED structure as a textured film to increase the light extraction efficiency. The light(More)
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