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A 2.4 to 5.4 GHz Low Power CMOS Reconfigurable LNA for Multistandard Wireless Receiver
A CMOS reconfigurable LNA is reported. By combination of switched inductors and varactors it performs continuous frequency tuning from 2.4 to 5.4 GHz with 500 MHz 3 dB-bandwidth. Switching transistorExpand
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A 2.4–5.4-GHz Wide Tuning-Range CMOS Reconfigurable Low-Noise Amplifier
A 2.4-5.4-GHz CMOS reconfigurable low-noise amplifier (LNA) is designed. It consists of two stages: a broadband input stage for a steady input matching and noise performance, and a reconfigurableExpand
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A 4.2-mW 6-dB Gain 5–65-GHz Gate-Pumped Down-Conversion Mixer Using Darlington Cell for 60-GHz CMOS Receiver
A high-gain gate-pumped down-conversion mixer at 60 GHz is realized in a standard 90-nm CMOS process. The proposed mixer adopted a Darlington cell and a microstrip-line Lange coupler to yield wideExpand
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A 340-GHz Heterodyne Receiver Front End in 40-nm CMOS for THz Biomedical Imaging Applications
A low-power and high-performance 340-GHz heterodyne receiver front end (RFE) optimized for terahertz (THz) biomedical imaging applications is proposed in this paper. The THz RFE consists of anExpand
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A 37.5-mW 8-dBm-EIRP 15.5$^{\circ}$-HPBW 338-GHz Terahertz Transmitter Using SoP Heterogeneous System Integration
A low-cost terahertz transmitter is proposed by using system-on-package (SoP) heterogeneous system integration. A signal source in 40-nm CMOS is integrated with an antenna array on a BenzocyclobuteneExpand
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On-Chip Transmission Line Modeling and Applications to Millimeter-Wave Circuit Design in 0.13um CMOS Technology
This paper presents the on-chip transmission line modeling and applications to circuit design at millimeter-wave (ram-wave) frequencies. The microstrip model of circuit simulators benefits in fastExpand
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Constant Loss Contours of Matching Networks for Millimeter-Wave LNA Design
This letter presents a new tool of constant loss contours for matching network loss evaluation. With a certain source impedance, the contours illustrate the matching loss while an arbitrary loadExpand
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2.4-GHz Complementary Metal Oxide Semiconductor Power Amplifier Using High-Quality Factor Wafer-Level Bondwire Spiral Inductor
A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metalExpand
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A 8-mW 77-GHz band CMOS LNA by using reduced simultaneous noise and impedance matching technique
This paper presents analysis and design of source inductance for multistage LNA at 77-GHz band in 90 nm CMOS technology. Instead of simultaneous noise and impedance matching, the analysis shows theExpand
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A 210-GHz Amplifier in 40-nm Digital CMOS Technology
This paper presents a 210-GHz amplifier design in 40-nm digital bulk CMOS technology. The theoretical maximum voltage gain that an amplifier can achieve and the loss of a matching network are derivedExpand
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