Chun-Lan Zhou

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The radio frequency (r. f.) magnetron sputtering was used for preparing silicon-rich silicon nitride films deposited on polished Si substrates at 80 degrees C substrate temperature. The high-purity Ar was used as a sputtering gas and the high-purity N2 as a reactive gas. The silicon nitride films with different Si-rich degrees were obtained by changing the(More)
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