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A physics-based multi-cell electro-thermal equivalent circuit model is described which is applied to the large-signal microwave characterization of AlGaAs/GaAs HBTs. This highly efficient model, which incorporates a new multi-finger electro-thermal model, has been used to perform DC, small-signal and load-pull characterization and investigate(More)
In this paper, we present a multiphysics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide-semiconductor (LDMOS) transistor that has a(More)
— A comprehensive modeling approach is applied to the study of pHEMT transistors for microwave power amplifier applications. This approach combines physical, electromagnetic and thermal simulations to model large power transistors used in these applications, allowing both the individual finger contribution and the global performance to be investigated in an(More)
This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technology. The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are discussed as the basis for developing optimum(More)
— The need for both linear and efficient pHEMTs for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level. For the first time, two-tone time domain simulations of a microwave pHEMT using a quasi-two-dimensional physical device model in a CAD environment are presented. The model fully(More)
— A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction.(More)
A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This nonlinear, process-oriented, model accounts for avalanche breakdown, hot carriers and process variations, and accurately predicts DC and microwave characteristics. The model has been applied to the optimization of LDMOS structures and shows good agreement(More)