Christopher Gaquiere

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Articles you may be interested in Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Appl. Lifetime-limited current in Cu-gate metal-oxide-semiconductor(More)
Temperature effect modelling and analysis have been carried out on 0.25 &#x03BC;m gate length AlGaN/GaN HEMT grown on SiC substrate over the temperature range from - 40 to 150&#x00B0;C by on-wafer S-parameter measurements up to 50 GHz. The temperature behaviour of the DC and equivalent circuit parameters including f<sub>t</sub> and f<sub>max</sub> were(More)
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