Christophe Muller

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The estimation of accuracy and applicability of QSAR and QSPR models for biological and physicochemical properties represents a critical problem. The developed parameter of "distance to model" (DM) is defined as a metric of similarity between the training and test set compounds that have been subjected to QSAR/QSPR modeling. In our previous work, we(More)
—Emerging non-volatile memories (NVM) based on re-sistive switching mechanism (RS) such as STT-MRAM, OxRRAM and CBRAM etc., are under intense R&D investigation by both academics and industries. They provide high write/read speed, low power and good endurance (e.g.,) beyond mainstream NVMs, which allow them to be embedded directly with logic units for(More)
The hippocampus is involved in spatial memory processes, as established in a variety of species such as birds and mammals including humans. In humans, some hippocampal-dependent memory functions may be lateralized, the right hippocampus being predominantly involved in spatial navigation. In rodents, the question of possible lateralization remains open.(More)
In this paper, we propose a new architecture of non-volatile Flip-Flop based on ReRAM unipolar resistive memory element (RNVFF). This architecture is proposed in the context of power-down applications. Flip-Flop content is saved into ReRAM memory cell before power-down and restored after power-up. To simulate such a structure a compact model of unipolar(More)
New memories, such as non-volatile resistive memories present bright prospect in catering to the ever-growing memory needs. In this paper, we investigate the usage of Oxide Resistive Random Access Memory (OxRRAM) to improve the communication switchboxes of Field-Programmable-Gate-Arrays (FPGAs). We prove the interest of using unipolar OxRRAM in such devices(More)
According to systems consolidation, as hippocampal-dependent memories mature over time, they become additionally (or exclusively) dependent on extra-hippocampal structures. We assessed the recruitment of hippocampal and cortical structures on remote memory retrieval in a performance-degradation resistant (PDR; no performance degradation with time) versus(More)
—This paper describes an analytical study of synchronous logic gate design based on hybrid structure with MOS and resistive switching non-volatile memories (RS-NVMs). This type of structure allows ultra-low power consumption during power down, while often-used data are saved in RS-NVM cells. The parallel data sensing achieves low-power and fast computation(More)
Common problems with resistive Oxide-based Resistive Random Access Memory (so-called OxRRAM) are related to high variability in operating conditions and low yield. Although research has taken steps to resolve these issues, variability remains an important characteristic for OxRRAMs. In this paper, a test structure consisting of non-addressable OxRRAM cells(More)