—The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 • C, InAlN/GaN HEMTs have been operated up to 900 • C for 50 h… (More)
Deep traps in AlGaN/GaN high electron mobility transistors on silicon substrate were characterized by the means of current-voltage and Deep Level Transient Spectroscopy (DLTS). DLTS measurements have revealed only hole-trap with an activation energy of 0.82eV. The nature and the localization of this trap are discussed here.
AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al 2 O 3 substrates reveals anomalies on I ds –V ds –T and I gs –V gs –T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current… (More)
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Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrate are known to be responsible for trapping processes like: threshold voltage shift, leakage current, degradation current, kink effect and hysteresis effect. The related deep levels are directly characterized by conductance deep level transient spectroscopy (CDLTS) method.… (More)