Christine Bunke

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Optimization of post Cu CMP cleaning performance can be accomplished through dilution ratio tuning and pad rinse of clean chemicals. Excessive chemical etching as well as megasonic power can induce high Cu roughness. Generation of hollow metal and Cu dendrite defects depends not only on the clean chemistry but also the queue time between plating and anneal(More)
Bevel etch used during wafer fabrication for semiconductor devices is discussed. In this paper, the bevel etch process was utilized in middle of the line processing to reduce back end of line (BEOL) defectivity. Tungsten and titanium nitride films, from the formation of contacts to the transistors, extend into the bevel region of the wafer and have been(More)
A “hybrid” post Cu CMP cleaning process that combines acidic and basic clean in sequence is developed and implemented. The new process demonstrates the strengths of both acidic and basic cleans and achieves a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal,(More)
A “hybrid” post-Cu CMP cleaning process that combines acidic and basic cleans in sequence is developed and implemented. The new process demonstrates the advantages of both acidic and basic cleans and achieves a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal,(More)
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