Christiensen D. C. Arandilla

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This paper examines the factors that affect the Static Noise Margin (SNM) of a 6T Static Random Access Memory (SRAM) cell designed in 90-nm CMOS. In this paper, the SRAM cell is simulated and noise margins are obtained while varying several parameters that affect SRAM operations. These parameters are temperature, threshold voltage, supply voltage, cell(More)
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