Christian Ribbat

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Continuous wave room-temperature output power of ,5 W for edge-emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 mm. Lasers emitting at 1140–60 nm useful as pump sources for Tm3þ-doped fibers for frequency up-conversion to 490 nm reach output powers close to(More)
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