Christian Renaux

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This paper investigates and compares experimentally the total ionizing dose (TID) effects in digital parameters of the fully depleted (FD) OCTO Silicon-On-Insulator (SOI) n-type Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) (OSM), that presents an octagonal gate geometry, versus its conventional (rectangular gate geometry) counterpart (CSM).(More)
This paper studies the feasibility of integrated devices on nanoporous anodic alumina substrates filled with ferromagnetic nanowires. The presence of ferromagnetic material is responsible for an increase of the permeability at low frequency, and a tunability in frequency when an external DC magnetic field is applied. Tunability performance of the inductance(More)
The impact of high-temperature effects is experimentally investigated in the octagonal layout style for planar silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs), named OCTO SOI MOSFETs (OSMs), in relation to the hexagonal [diamond SOI MOSFETs (DSMs)] and the standard (rectangular conventional SOI MOSFETs) ones(More)
For the past few years, the mobile phone market has been facing fast growth. However, the first generations of mobile telecommunications were based on several different standards over the world, and even at the time major operators negotiate for the third generation licenses, it seems UMTS, CDMA2000 and TD-SCDMA cannot achieve one single standard. A great(More)
On this study, it is described an experimental comparative analysis of the devices matching regarding a 360 Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors, n-type (nMOSFETs) sample, which were implemented with a hexagonal (Diamond) and rectangular gate geometries. Considering some relevant electrical parameters studied in the(More)
This paper describes an experimental comparative study between the silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) field effect transistors (MOSFETs) implemented with the octagonal gate geometries and their typical rectangular counterparts operating in high-temperature conditions. The 1 <inline-formula> <tex-math notation="LaTeX">${\mu }\text{m}$(More)
An experimental comparative study of the high temperature effects between the diamond SOI MOSFET (DSM) and conventional SOI MOSFET (CSM) counterparts is performed. The Diamond layout style has demonstrated better electrical performance in high temperatures environment, mainly for high-frequency analog IC applications, regarding the same gate area, aspect(More)
This manuscript has the objective to perform an experimental comparative analysis of the total ionizing dose influence in the Silicon-On-Insulator Metal-Oxide-Semiconductor Field Effect Transistor implemented with the octagonal gate shape (OCTO) and the standard one (rectangular gate shape) counterpart, after a X-ray radiation exposure. The back-gate bias(More)