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Carbon-based supercapacitors can provide high electrical power, but they do not have sufficient energy density to directly compete with batteries. We found that a nitrogen-doped ordered mesoporous few-layer carbon has a capacitance of 855 farads per gram in aqueous electrolytes and can be bipolarly charged or discharged at a fast, carbon-like speed. The… (More)
Supercapacitors suffer either from low capacitance for carbon or derivate electrodes or from poor electrical conductivity and electrochemical stability for metal oxide or conducting polymer electrodes. Transition metal nitrides possess fair electrical conductivity but superior chemical stability, which may be desirable candidates for supercapacitors.… (More)
The authors have noticed that in the original Article, the grant numbers cited in the Acknowledgements section were incorrect. The correct grant numbers appear below.
Intrinsic polarization of ferroelectrics (FE) helps separate photon-generated charge carriers thus enhances photovoltaic effects. However, traditional FE with transition-metal cations (M) of d⁰ electron in MO₆ network typically has a band gap (E(g)) exceeding 3.0 eV. Although a smaller E(g) (2.6 eV) can be obtained in multiferroic BiFeO₃, the value is still… (More)
Experimental Synthesis of CuInS 2 nanopompons: In a typical synthesis of CuInS 2 nanopompons, 0.2 mmol of Cu 2 O, 0.4 mmol of In(OH) 3 and 2 ml of thioaceticacid (CH 3 COSH) were in turn added into a 25 ml vial to form a black mixture under stirring. Then 1 ml of ammonia aqueous solution was added drop by drop into the vial to form a clear red solution,… (More)
Rechargeable magnesium batteries have attracted considerable attention because of their potential high energy density and low cost. However, their development has been severely hindered because of the lack of appropriate cathode materials. Here we report a rechargeable magnesium/iodine battery, in which the soluble iodine reacts with Mg2+ to form a soluble… (More)
Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the forbidden band gap. Diffuse reflection spectra and… (More)