Chinmay K. Maiti

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Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The(More)
Negative Bias Temperature Instability (NBTI) of p-MOSFET parameters (threshold voltage, linear and saturation drain current, gate-drain capacitance, etc.) is becoming a serious reliability concern for digital and analog CMOS circuits. To maintain the current scaling trends, the understanding of the fundamental physics of failure mechanisms in p-MOSFETs is(More)
Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscat-tering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectro-scopy (XPS). ZrO 2 thin films have been deposited on(More)