Development and implementation of a Technology CAD (TCAD) simulation laboratory — a real time online laboratory — accessed through the Internet is reported. Feasibility of integration of a remote hardware-based Microelectronics laboratory with a technology CAD simulation laboratory has been studied. TCAD laboratory will enhance the… (More)
Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The… (More)
We have simulated the programming/erasing characteristics and studied the reliability aspects of silicon nanocrystal memory (NCM) cells Due to the charge storage in discrete nodes, NCM cells clearly show a very high robustness against gate and drain disturbs and, furthermore, they are negligibly impacted by SILC.
Isotopic purification of group IV elements leads to substantial increase in thermal conductivity due to reduced scattering of the phonons. Based on this concept, a simulation study is used to demonstrate the reduction of at least 25 o C in LDMOS average temperature.
Device and circuit simulations using process/physics-based Technology CAD tools are done to project the scaled CMOS speed-performance enhancement that can be expected from process-induced strained-Si CMOS.