The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained… (More)
Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The… (More)
Negative Bias Temperature Instability (NBTI) of p-MOSFET parameters (threshold voltage, linear and saturation drain current, gate-drain capacitance, etc.) is becoming a serious reliability concern for digital and analog CMOS circuits. To maintain the current scaling trends, the understanding of the fundamental physics of failure mechanisms in p-MOSFETs is… (More)
Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon substrates have been investigated. ZnO/Si substrates are characterized by Rutherford backscat-tering (RBS), X-ray diffraction (XRD), Fourier transform infrared (FTIR), and X-ray photoelectron spectro-scopy (XPS). ZrO 2 thin films have been deposited on… (More)
Isotopic purification of group IV elements leads to substantial increase in thermal conductivity due to reduced scattering of the phonons. Based on this concept, a simulation study is used to demonstrate the reduction of at least 25 o C in LDMOS average temperature.