Chin-Ching Hsu

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High electron mobility transistors (HEMT) Tin oxide (SnO 2) Annealing a b s t r a c t In this study, we report on a demonstration of hydrogen sensing at low temperature using SnO 2 functionalized AlGaN/GaN high electron mobility transistors (HEMT). The SnO 2 dispersion was synthesized via a hydrothermal method and selectively deposited on the gate region of(More)
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