Chin-Che Tin

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Silicon carbide (SiC) field-plate terminated Schottky diodes using silicon dioxide (SiO2) dielectric experience high electric field in the insulator and premature dielectric breakdown, attributed to the lower dielectric constant of the oxide. To alleviate this problem we explore the use of high-k dielectrics, silicon nitride (Si3N4) and sapphire (Al2O3), on(More)
The drain-induced barrier lowering (DIBL) effect and its dependence on the channel doping concentration in 4H-SiC metal semiconductor field effect transistors (MESFETs) have been studied using the physical drift and diffusion model. Our simulation results showed that the high drain voltage typically applied in 4H-SiC power MESFETs could drastically increase(More)
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