Chih-Kai Hu

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This research focuses on the adaptive control for a high temperature heat source. The significant characteristic of adaptive control is self-regulation. The adaptive control is very important in a MOCVD process since different parameter values to control temperature in each temperature step are required. Simulations and experiments are performed to verify(More)
A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The mechanism models were developed through rate of production analysis. All of the results can be compared in(More)
The temperature uniformity of thin film process is an important issue for susceptor in high temperature vacuum system. When the temperature of process is extremely high the uniformity is not only difficult to control, but also hard to maintain. In order to raise the temperature utilization at high temperature which is higher than 1300°C, the heating(More)
Semiconductor equipment usually can be divided into five sub-system modules, (a) heating system, (b) exhausting system, (c) injecting system, (d) power control and (e) vacuum chamber. Metal organic chemical vapor deposition (MOCVD) process is the key process to deposit epitaxy thin film, and the uniformity is determined by the distribution of susceptor(More)
Numerical analysis provides a way to simulate a high temperature system so that a design of heat source can be cost-effective. This research is in design of two-zone heater for a MOCVD vacuum rector. It makes the temperature deviation on wafer reduced to be ±2% from the 10% in single-zone heater. By the design of such a heat source, the temperature(More)
A MOCVD process requires not only high heating efficiency, but also good temperature uniformity on susceptor surface. The most common material of susceptor is graphite, but the heating lifetime is very short. Instead, this work uses the SiC as susceptor material. It enhances both the lifetime and thermal conductivity. In the meantime, we also change the(More)
In this paper, a numerical analysis that approaches to model localized surface plasmon (LSP) leading to enhance lighting intensity in organic light emitting diode (OLED) is reported. LSP was applied in enhancing signal of Raman Spectroscopy, absorptivity of solar cell and lighting intensity of light emitting diode (LED), etc. It is commonly manufactured(More)
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