Chih-Hung Pan

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The phylogeographical patterns and population genetic structures of Varicorhinus barbatulus in Taiwan were investigated based on genetic diversity of 34 allozyme loci and nucleotide sequences of 3' end of the cytochrome b gene, tRNA genes, D-loop control region, and the 5' end of the 12S rRNA of mtDNA. Allozyme and mtDNA analyses revealing evident(More)
In this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)2 fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM.(More)
In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that(More)
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM.(More)
We realize a device with biological synaptic behaviors by integrating silicon oxide (SiO(x)) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2-based materials in(More)
A repeated measurement cohort study was conducted to determine whether 2-napthol can be a suitable biomarker for evaluating the magnitude of exposure to PAHs from coke oven emissions. Time-course patterns of urinary 2-naphthol levels in coke-oven workers were examined. Also, the correlation between urinary 2-naphthol levels and PAHs from personal breathing(More)
This study proposes a method for a HfO2-based device to exhibit both resistive switching (RS) characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium (V) as the top electrode. This simple V/HfO2/TiN structure can demonstrate these two different properties depending on forming polarities. The RS mechanism(More)
In this study, an O2 inductively coupled plasma (ICP) treatment was developed in order to modify the characteristics of indium tin oxide (ITO) film for use as an insulator in resistive random access memory (RRAM). After the O2 plasma treatment, the previously conductive ITO film is oxidized and becomes less conductive. In addition, after capping the same(More)
A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover,(More)
The study aimed to examine whether urinary 8-hydroxy-2’-deoxyguanosine (8-OHdG) could serve as a biomarker for assessing sperm DNA integrity. Urine and semen samples were collected from 124 coke-oven workers, who had chronically been exposed to polycyclic aromatic hydrocarbons (PAHs), from a steel plant in Kaohsiung, Taiwan. The coke-oven workers were(More)
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