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An asymmetrical MOSFET structure is formed by using a focused-ion-beam implantor to create a p/sup +/ channel doping next to the source. This work builds on previous efforts by providing a uniquely… (More)
The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements… (More)
In 24 patients with vascular dementia of Binswanger's type (VDBT) and 14 age-matched neurologically normal volunteers, we investigated the relationship between clinical features, white matter lesions… (More)