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The effect of under-bump-metallization (UBM) on electromigration was investigated at temperatures ranging from 135C to 165C. The UBM structures were examined: 5-μm-Cu/3-μm-Ni and 5 μm Cu. Experimental results show that the solder joint with the Cu/Ni UBM has a longer electromigration lifetime than the solder joint with the Cu UBM. Three important parameters(More)
This work demonstrated the feasibility of detecting 250zM Escherichia coli O157:H7 eaeA target DNA by using a magnetic bead-based DNA detection assay with designed labeling strategy within 40-60min. The magnetic beads were used as the solid support for the binding probe and isolated the target DNA from the sample. The detection signals could be amplified(More)
Solder joints with Cu columns appear to be one of the best structures to resist electromigration. Three-dimensional thermoelectrical analysis was employed to simulate the current density and temperature distributions for eutectic SnPb solder bumps with 0.5, 5, 25, 50, and 100 lm Cu under bump metallization (UBM). It was found that the hot spots and current(More)
As microelectronic industry develops 3D IC on the basis of through-Si-vias (TSV) technology, the processing and reliability of microbumps, which are used to interconnect the stacking chips, is being actively investigated. Due to the reduction in size of microbumps, the diameter is about one order of magnitude smaller than that of flip chip solder joints,(More)
Highly oriented [111] Cu grains with densely packed nanotwins have been fabricated by direct-current electroplating with a high stirring rate. The [111]-oriented and nanotwinned Cu (nt-Cu) allow for the unidirectional growth of Cu(6)Sn(5) intermetallics in the microbumps of three-dimensional integrated-circuit packaging; a uniform microstructure in a large(More)
  • Chih Chen
  • 2006 8th International Conference on Solid-State…
  • 2006
With the portable devices becoming smaller and more compact in size, flip-chip technology has been adopted for fine-pitch packaging in microelectronics industry. Area array of tiny solder joints can be fabricated on Si chips to achieve high-density packaging. In addition, as the required performance continues to increase, the input/output (I/O) pin count of(More)
0026-2714/$ see front matter 2009 Published by doi:10.1016/j.microrel.2009.03.001 * Corresponding author. Tel.: +886 3573 1814; fax: E-mail address: chih@mail.nctu.edu.tw (C. Chen). Three dimensional thermo-electrical analysis was employed to simulate the current density and temperature distributions for eutectic SnAg solder bumps with shrinkage bump sizes.(More)
Direct Cu-to-Cu bonding was achieved at temperatures of 150-250 °C using a compressive stress of 100 psi (0.69 MPa) held for 10-60 min at 10(-3) torr. The key controlling parameter for direct bonding is rapid surface diffusion on (111) surface of Cu. Instead of using (111) oriented single crystal of Cu, oriented (111) texture of extremely high degree,(More)
This study investigated Schottky- and ohmic-contact effects upon the photoresponses of ITO/TiO(2)/Si and Ti/TiO(2)/Si nanotube-based photodiodes. The TiO(2) tube arrays were fabricated by atomic layer deposition (ALD) and shaped by an anodic aluminum oxide (AAO) template on a p-type Si substrate. The contact area between the electrode (Ti or ITO) and the(More)
Articles you may be interested in Influence of Cu column under-bump-metallizations on current crowding and Joule heating effects of electromigration in flip-chip solder joints Effect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structure Appl. Investigation of void nucleation and propagation during(More)