Chien-Ting Lin

  • Citations Per Year
Learn More
Platelets are an ideal model for studying a rapid morphological change in response to various signal transduction systems. Morphological changes via the activation of integrin alphaIIbbeta3 in platelets have been investigated intensively. In contrast, activation via integrin alpha6beta1 is less well studied. Here, we provide the first biochemical evidence(More)
We study the dynamics of protein folding via statistical energy-landscape theory. In particular, we concentrate on the local-connectivity case with the folding progress described by the fraction of native conformations. We found that the first passage-time (FPT) distribution undergoes a dynamic transition at a temperature below which the FPT distribution(More)
Purpose – The purpose of this paper is to look at factors which result in improved attitudinal outcome (AO) through the proposal and empirical validation of a theoretical model. The model incorporates four major self-perceived dimensions: personality traits (PTs), job characteristics ( JCs), transformational leadership behaviors (LBs), and AOs.(More)
Genetic polymorphisms of drug metabolizing enzymes, such as cytochromes P450 (CYPs), play major roles in the variations of drug responsiveness in human. The aim of this study is to identify the high prevalence (minor allele frequencies >1%) of the abnormal metabolite alleles of CYP2C9, CYP2C19, CYP2D6, CYP3A4, and CYP3A5 in the Taiwanese population. The(More)
Article history: Received 23 November 2009 Received in revised form 21 January 2010 Available online 1 March 2010 0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.01.045 * Corresponding author. E-mail address: (Y.-K. Fang In this work, influences of oxygen effect on an Hf-based high-k gate dielectric were(More)
This paper describes a comprehensive study of the impact of tCESL (tensile Contact Etch Stop Liner) and cCESL (compressive Contact Etch Stop Liner) on tensile metal gate MuGFET with SOI and globally strained SOI (sSOI) substrates. We have demonstrated that tCESL and cCESL can be effectively used on MuGFETs to provide performance gain. Since tCESL and cCESL(More)
For nMOSFET, utilizing the high tensile stress gate capping layer (GC layer) and length of diffusion (LOD) to control the tensile and compressive stress in channel regions were developed. In this work, in order to investigate the interactive stress effects of GC layer film thickness, LOD and gate width on device's characteristic and hot-carrier reliability;(More)