Chien-Ping Lee

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Current densities ranging from 440 to 543 kA/cm 2 were applied to InGaP HBTs in WLR tests. Even with such a high current stress at 440 kA/cm 2 and an estimated junction temperature of 396 °C, the transistor lasted for 101 hours before our failure criterion was met. The current gain degradation behavior was similar to that shown in traditional, low current(More)
Deeply understanding HBT thermal characteristics and safe operating area (SOA) is critical to the improvement of the ruggedness and reliability of power amplifiers. In this work, we investigate the device size effect of SOA and thermal resistance by means of experimental measurement, analytical modeling and 3-dimensional simulation. For HBTs with a factor(More)
This paper reports the device process and reliability aspects of a high voltage InGaP/GaAs HBT technology for 28V operation. The key differences and challenges from the material and process perspectives relative to the conventional low voltage HBT technology are first described. Long-term reliability tests performed at 28V bias voltage, 5.2kA/cm<sub>2</sub>(More)
Nonlinear HBT models are presented for 15W power amplifiers with superior back-off linearity. Each amplifier consists of 8 Building Blocks of 28V InGaP/GaAs HBT. The P1dB is 42dBm. The models are based on the AHBT model for the Building Block (1BB) reported previously. The model for the amplifier at 2.14GHz is scaled from the AHBT model for 1BB whereas the(More)
The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors (HBT) has been studied using two-dimensional (2D) Technology Computer-Aided Design (TCAD) tool. The hydrodynamic transport based impact ionization and self-heating models were implemented. The DC simulation result shows two distinct SOA boundary regimes corresponding to different(More)
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