Chien-Hui Lu

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Cobalt silicide has been used in ULSI process from 180nm to 90nm node and beyond. As a conventional self-aligned silicide process procedure [1], cobalt is firstly deposited on cleaned silicon surface, then annealed (450~600&#x00B0; C) to produce Co<sub>2</sub>Si or CoSi with resistivity around 100~150&#x03A9; cm. A Hydrochloric and Hydrogen Peroxide Mixture(More)
In PVD (Physical Vapor Deposition) process, this study mainly exhibits an innovatively designing approach of thin film micro-control which the Dummy Plate of Step type and the proportional of step structure (h/d) were optimized to attain reasonable Guard band. The optimized approach can effectively reduce the film deposition to avoid shell-like defect and(More)
The mainstream in DDR DRAM packaging is the face down substrate-on-chip (SOC) configuration using Printable Die Attach Adhesives (PDAA). PDDA have been developed that deliver the performance of a film with the low cost of a paste. PDDA are stenciled onto the substrate and the subsequent processes included B-cure, die bonding, and C-cure will reduce the(More)
With efficient DOE method, we figure out the regression equations for overall devices by dose scalar only and successfully transfer SDE and SD ion implantation from spot beam batch type to parallel ribbon beam single type ion implanter in sub-100nm CMOS process. Using the regression equations, the process window is clear expressed. That helps us to(More)
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