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We reported on a two-dimensional simulation of electrical properties of the radio frequency ͑rf͒ sputter amorphous In–Ga–Zn–O ͑a-IGZO͒ thin-film transistors ͑TFTs͒. The a-IGZO TFT used in this work has the following performance: field-effect mobility ͑␮ eff ͒ of ϳ12 cm 2 / V s, threshold voltage ͑V th ͒ of ϳ1.15 V, subthreshold swing ͑S͒ of ϳ0.13 V / dec,(More)
The zinc ion in the title complex, [N,N'-bis(2-pyridylethyl)-2-(2-pyridyl)ethylamine-kappa 4N]zinc(II) diperchlorate, [Zn(C21H24N4)](ClO4)2, displays a distorted tetrahedral configuration. The Zn-Npy distances range from 1.979 (5) to 1.999 (5) A, while the Zn-Namine distance is 2.028 (5) A. The Npy-Zn-Npy and Npy-Zn-Namine angles range from 111.9 (2) to(More)
W (AM) flat panel displays (F F e studied the optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). To develop a-IGZO density-of-states model, intrinsic a-IGZO optical properties such as optical band gap and Urbach energy, and TFT characteristics under illumination are investigated. During the(More)
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