We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100,… (More)
We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the… (More)
In this paper, we design and implement a WSN testbed with a distributed architecture. It allows researchers to submit their experiments and to retrieve the results from the central server. In the testbed, we also propose a software-based hardware-supported scheme to measure the energy consumption of running sensor nodes. And we compare our… (More)
BACKGROUND Hec1 (NDC80) is an integral part of the kinetochore and is overexpressed in a variety of human cancers, making it an attractive molecular target for the design of novel anticancer therapeutics. A highly potent first-in-class compound targeting Hec1, TAI-1, was identified and is characterized in this study to determine its potential as an… (More)
We apply immense strain to ultralong, suspended, single-walled carbon nanotubes while monitoring their Raman spectra. We can achieve strains up to 13.7 ± 0.3% without slippage, breakage, or defect formation based on the observation of reversible change in Raman spectra. This is more than twice that of previous observations. The rate of G band downshift with… (More)
This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract—Memristive electrical behavior has recently gained attention because of technological advances in nanostructuring, which has enabled the fabrication of working devices. However, such… (More)
A novel spin modulation of work function for C adsorbed Cr/Fe(001) metal gate AIP Advances 2, 042134 (2012) Relation between the work function and Young's modulus of RhSi and estimate of Schottky-barrier height at RhSi/Si interface: An ab-initio study Control of Schottky barrier heights by inserting thin dielectric layers Appl.