Chia-Chi Chang

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We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100,(More)
Hypoxia, a common environmental condition, influences cell signals and functions. Here, we compared the effects of hypoxia (1% oxygen) and normoxia (air) on chondrogenic differentiation of human mesenchymal stem cells (MSCs). For in vitro chondrogenic differentiation, MSCs were concentrated to form pellets and subjected to conditions appropriate for(More)
We report a systematic study of carrier dynamics in Al(x)Ga(1-x)As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L(diff)) increases from 30 to 180 nm, as measured by electron beam induced current (EBIC) mapping, and the photoluminescence (PL) lifetime increases from sub-60 ps to 1.3 ns. A 48-fold enhancement in the(More)
In this paper, we design and implement a WSN testbed with a distributed architecture. It allows researchers to submit their experiments and to retrieve the results from the central server. In the testbed, we also propose a software-based hardware-supported scheme to measure the energy consumption of running sensor nodes. And we compare our(More)
  • Adam W Bushmaker, Chia-Chi Chang, Vikram V Deshpande, Moh R Amer, Marc W Bockrath, Stephen B Cronin
  • 2010
This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract—Memristive electrical behavior has recently gained attention because of technological advances in nanostructuring, which has enabled the fabrication of working devices. However, such(More)
Highly perfect, twin-free GaAs nanosheets grown on (111)B surfaces by selective area growth (SAG) are demonstrated. In contrast to GaAs nanowires grown by (SAG) in which rotational twins and stacking faults are almost universally observed, twin formation is either suppressed or eliminated within properly oriented nanosheets are grown under a range of growth(More)
A novel spin modulation of work function for C adsorbed Cr/Fe(001) metal gate AIP Advances 2, 042134 (2012) Relation between the work function and Young's modulus of RhSi and estimate of Schottky-barrier height at RhSi/Si interface: An ab-initio study Control of Schottky barrier heights by inserting thin dielectric layers Appl.
We have recently demonstrated that GaAs nanosheets can be grown by metal-organic chemical vapor deposition (MOCVD). Here, we investigate these nanosheets by secondary electron scanning electron microscopy (SE-SEM) and electron beam induced current (EBIC) imaging. An abrupt boundary is observed between an initial growth region and an overgrowth region in the(More)
We apply immense strain to ultralong, suspended, single-walled carbon nanotubes while monitoring their Raman spectra. We can achieve strains up to 13.7 ± 0.3% without slippage, breakage, or defect formation based on the observation of reversible change in Raman spectra. This is more than twice that of previous observations. The rate of G band downshift with(More)