Chi-Hsiang Hsu

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The electrostatic discharge (ESD) characteristics of GaN-based light-emitting diodes (LEDs) with naturally textured p-GaN contact layers grown on <i>c</i>-axis miscut sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35&#x00B0; miscut sapphire shows the highest ESD tolerance, whereas the device grown on a(More)
A new and simple Al/aluminum-doped zinc oxide (AZO) composite structure is proposed to act as a transparent conductive layer (TCL) for GaN-based LEDs. The Al/AZO composite layers effectively improve the current spreading performance, compared with an AZO TCL. Experimentally, the specific contact resistance of the studied Al/AZO LED is reduced by about(More)
A hybrid SiO<sub>2</sub> micro/nanospheres antireflection coating, deposited by a rapid convection deposition, acting as a passivation layer of GaN-based light-emitting diodes (LEDs) is studied in this paper. Since the critical angle could be enlarged by antireflection coating, Fresnel reflection could be reduced. In addition, due to the roughened surface(More)
GaN-based light-emitting diodes (LEDs) grown on c-plane vicinal sapphire substrates are fabricated and characterized. Based on the material quality and electrical properties, the LED with a 0.2 degrees tilt sapphire substrate (device A) exhibits the lowest defect density and high performance, while the LED with a 1.0 degrees tilt sapphire (device D)(More)
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