Cheolgyu Kim

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This paper presents a warpage analysis method that predicts the warpage behavior of electroplated Cu films on glass fiber-reinforced polymer (GFRP) packaging substrates. The analysis method is performed using the following sequence: fabricate specimens for scanning 3D contours, transform 3D data into curvatures, compute the built-in stress of the film using(More)
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under CHC/GIDL alternating stress is investigated. CHC stress generates negative oxide charges while GIDL stress generates positive oxide charges in the gate oxide near drain region. Theses oxide charges degrade device reliability, and degradation is enhanced when CHC stress and GIDL stress are(More)
The fabrication of a highly ordered array of single-crystalline nanostructures prepared from solution-phase or vapor-phase synthesis methods is extremely challenging due to multiple difficulties of spatial arrangement and control of crystallographic orientation. Herein, we introduce a nanotransplantation printing (NTPP) technique for the reliable(More)
This paper investigates voltage-dependent degradation of HfSiON/SiO2 nMOSFETs under conditions of positive bias temperature instability (PBTI), and proposes a PBTI degradation model that can use data from acceleration tests to predict device lifetime accurately. Experimental results show that the PBTI stress generated shallow traps in HfSiON and the(More)
Warpage of packaging substrate has been at issue due to thin and flexible substrate. It is occurred during manufacturing processes. Although warpage research based on thin metal film and silicon substrate was actively studied, it has difficulty about research of polymer based electronic due to its flexibility and low stiffness compared to metal and silicon(More)
Channel width dependence of mechanical stress effects on a nanoscale n-channel metal–oxide-semiconductor field-effect transistor using the shallow trench isolation (STI) is investigated. The results indicate that the mechanical stress induced by the STI enhances mobility, off currents, and the impact ionization significantly. 841 MPa of tensile stress is(More)
In this study, a mechanism of warpage orientation determination is investigated for thin package substrates. Understanding the mechanism is important because assembly process yield will significantly increase if the warpage orientation is controllable. We found that the copper clad laminate (CCL) itself already contains considerable residual stress from its(More)
Warpage of semiconductor packaging substrate during or after manufacturing processes has been a serious issue in the electronics industry. We found that the packaging substrate, which has initial warpage at room temperature, changes its warpage orientation by flipping from a concave to a convex cylindrical shape during the thermal processing. In this paper,(More)